View FS5ASJ-3-T13_5014152.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

FS5ASJ-3
High-Speed Switching Use Nch Power MOS FET
REJ03G1406-0200 (Previous: MEJ02G0077-0101) Rev.2.00 Aug 07, 2006
Features
* * * * * Drive voltage : 4 V VDSS : 150 V rDS(ON) (max) : 0.35 ID : 5 A Integrated Fast Recovery Diode (TYP.) : 85 ns
Outline
RENESAS Package code: PRSS0004ZA-A (Package name: MP-3A)
2, 4 4
1 12 3
1. 2. 3. 4.
Gate Drain Source Drain
3
Applications
Motor control, Lamp control, Solenoid control, DC-DC converters, etc.
Maximum Ratings
(Tc = 25C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg -- Ratings 150 20 5 20 5 5 20 30 - 55 to +150 - 55 to +150 0.32 Unit V V A A A A A W C C g Conditions VGS = 0 V VDS = 0 V
L = 100 H
Typical value
Rev.2.00
Aug 07, 2006
page 1 of 6
FS5ASJ-3
Electrical Characteristics
(Tch = 25C)
Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol V(BR)DSS IGSS IDSS VGS(th) rDS(ON) rDS(ON) VDS(ON) | yfs | Ciss Coss Crss td(on) tr td(off) tf VSD Rth(ch-c) trr Min. 150 -- -- 1.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- 1.5 0.27 0.28 0.54 9.5 800 100 35 14 17 65 31 1.0 -- 85 Max. -- 0.1 0.1 2.0 0.35 0.37 0.70 -- -- -- -- -- -- -- -- 1.5 4.17 -- Unit V A mA V V S pF pF pF ns ns ns ns V C/W ns Test conditions ID = 1 mA, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 150 V, VGS = 0 V ID = 1 mA, VDS = 10 V ID = 2 A, VGS = 10 V ID = 2 A, VGS = 4 V ID = 2 A, VGS = 10 V ID = 2 A, VDS = 5 V VDS = 10 V, VGS = 0 V, f = 1MHz VDD = 80 V, ID = 2 A, VGS = 10 V, RGEN = RGS = 50 IS = 2 A, VGS = 0 V Channel to case IS = 5 A, dis/dt = -100 A/s
Rev.2.00
Aug 07, 2006
page 2 of 6
FS5ASJ-3
Performance Curves
Power Dissipation Derating Curve
50 3 2
Maximum Safe Operating Area
tw
10 0
=
Power Dissipation PD (W)
Drain Current ID (A)
40
30
101 7 5 3 2 100 7 5 3 2
10
s
s
DC
20
10
0
0
50
100
150
200
10-1 7 5 Tc = 25C 3 Single Pulse 2 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2
Case Temperature Tc (C)
Drain-Source Voltage VDS (V)
Output Characteristics (Typical)
10
VGS = 10V 4V 3.5V
Output Characteristics (Typical)
5.0
VGS = 10V 4V 3.5V 3V
Tc = 25C Pulse Test
3V
Tc = 25C Pulse Test
Drain Current ID (A)
Drain Current ID (A)
8
4.0
2.5V
6
PD = 30W
3.0
4
2.5V
2.0
2
2V
1.0
2V
0
0
1.0
2.0
3.0
4.0
5.0
0
0
0.4
0.8
1.2
1.6
2.0
Drain-Source Voltage VDS (V)
Drain-Source Voltage VDS (V)
Drain-Source On-State Voltage VDS(ON) (V)
Drain-Source On-State Resistance rDS(ON) ()
On-State Voltage vs. Gate-Source Voltage (Typical)
5.0
On-State Resistance vs. Drain Current (Typical)
0.5
Tc = 25C Pulse Test
4.0
Tc = 25C Pulse Test
0.4
VGS = 4V 10V
3.0
ID = 8A
0.3
2.0
5A
0.2
1.0
2A
0.1 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
0
0
2
4
6
8
10
Gate-Source Voltage VGS (V)
Drain Current ID (A)
Rev.2.00
Aug 07, 2006
page 3 of 6
FS5ASJ-3
Forward Transfer Admittance vs. Drain Current (Typical)
Transfer Characteristics (Typical)
Forward Transfer Admittance | yfs | (S)
10
Drain Current ID (A)
8
Tc = 25C VDS = 10V Pulse Test
102 7 5 4 3 2 101 7 5 4 3 2 100 0 10
VDS = 10V Pulse Test
6
4
2
Tc = 25C 75C 125C
0
0
2
4
6
8
10
2 3 4 5 7 101
2 3 4 5 7 102
Gate-Source Voltage VGS (V) Capacitance vs. Drain-Source Voltage (Typical)
104 7 5 3 2 103 7 5 3 2 102 7 5 3 2 101
Ciss
Drain Current ID (A)
Switching Characteristics (Typical)
103 7 5 4 3 2 102 7 5 4 3 2 101 -1 10 2 3 4 5 7 100
Capacitance C (pF)
Switching Time (ns)
Tch = 25C VDD = 80V VGS = 10V RGEN = RGS = 50
td(off) tf tr td(on)
Coss
Tch = 25C f = 1MHz VGS = 0V
Crss
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
2 3 4 5 7 101
Drain-Source Voltage VDS (V) Gate-Source Voltage vs. Gate Charge (Typical)
10 20
Drain Current ID (A) Source-Drain Diode Forward Characteristics (Typical)
VGS = 0V Pulse Test
Gate-Source Voltage VGS (V)
Tch = 25C ID = 5A
8
VDS = 50V
Source Current IS (A)
16
6
80V 100V
12
Tc = 125C
4
8
75C 25C
2
4
0
0
4
8
12
16
20
0
0
0.4
0.8
1.2
1.6
2.0
Gate Charge Qg (nC)
Source-Drain Voltage VSD (V)
Rev.2.00
Aug 07, 2006
page 4 of 6
FS5ASJ-3
On-State Resistance vs. Channel Temperature (Typical)
101 7 5 4 3 2 100 7 5 4 3 2 10-1 -50 0 50 100 150
Drain-Source On-State Resistance rDS(ON) (25C)
Gate-Source Threshold Voltage VGS(th) (V)
Drain-Source On-State Resistance rDS(ON) (tC)
Threshold Voltage vs. Channel Temperature (Typical)
4.0
VGS = 10V ID = 2A Pulse Test
VDS = 10V ID = 1mA
3.2
2.4
1.6
0.8
0
-50
0
50
100
150
Channel Temperature Tch (C)
Channel Temperature Tch (C)
Drain-Source Breakdown Voltage V(BR)DSS (25C)
Transient Thermal Impedance Zth(ch-c) (C/W)
Drain-Source Breakdown Voltage V(BR)DSS (tC)
Breakdown Voltage vs. Channel Temperature (Typical)
1.4
Transient Thermal Impedance Characteristics
102 7 5 3 2 101 7 5 D = 1.0 3 0.5 2
0.2
VGS = 0V ID = 1mA
1.2
1.0
0.8
PDM 0.1 0.05 0.02 0.01 Single Pulse
tw T D= tw T
0.6
100 7 5 3 2
0.4
-50
0
50
100
150
10-1 -4 10 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102
Channel Temperature Tch (C)
Pulse Width tw (s)
Switching Time Measurement Circuit
Vin Monitor D.U.T. RL Vin Vout RGS VDD Vout Monitor
Switching Waveform
90%
RGEN
10% 10% 10%
90% td(on) tr
90% td(off) tf
Rev.2.00
Aug 07, 2006
page 5 of 6
FS5ASJ-3
Package Dimensions
Package Name MP-3A JEITA Package Code SC-63 RENESAS Code PRSS0004ZA-A Previous Code MASS[Typ.] 0.32g
Unit: mm
1 0.2
6.6 5.3 0.2
2.3 0.5 0.2
6.1 0.2
10.4Max
0.1 0.1
1Max
2.5Min
0.76 0.2
0.76
0.5 0.2 2.3 0.2
2.3
Order Code
Lead form Standard packing Quantity Standard order code Standard order code example FS5ASJ-3-T13 FS5ASJ-3
Surface-mounted type Taping 3000 Type name - T +Direction (1 or 2) +3 Surface-mounted type Plastic Magazine (Tube) 75 Type name Note : Please confirm the specification about the shipping in detail.
Rev.2.00
Aug 07, 2006
page 6 of 6
1
1.4 0.2
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
http://www.renesas.com
Renesas Technology Malaysia Sdn. Bhd Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510
(c) 2006. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .6.0

▲Up To Search▲

Price & Availability of FS5ASJ-3-T13

	To Download FS5ASJ-3-T13 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .